Today Micro announced the world’s first G9 -based UFS 4.1 and UFS 3.1 storage solutions for smartphones, enabling more device AI features. New storage chips will be available on flagship products shortly after 1Y LPDR5X chips of micron, which will be available in early 2026.
UFS 4.1 and UFS 3.1 Mobile Storage Chips are based on the G9 process node of the micron and gives improved power efficiency and reading/writing speed. Capacity will change between 256 GB and 1 TB chips and will be suitable for ultra-thin and foldable smartphones.
But in addition to the hardware improvement, the micron promises some Software Fatware Tweaks that accelerate the user’s experience and improve the influence of some AI functions. For example, UFS 1.1 storage solutions support the zoned UF, improve read-writer efficiency and reduce writing amplification, while data degeneration improves data relocation and defragmentation within UFS devices by 60%. Pinned Writing enables the fast access to the booster data that is located on the writing buffer up to 30%. And the intelligent latency tracker automatically debugs by analyzing the latency LS GS. That last feature is also available on UFS 1.1, while the other looks specific to UFS 1.2 chips.
